to-220 -3l plastic-encapsulate transistors MJE2955 transistor (pnp) features g eneral p urpose and s witching a pplications maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -70 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current -continuous -10 a p c collector power dissipation 2 w t j junction temperature 150 t stg storage temperature range -55-150 electrical characteristics(t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =-10ma, i e =0 -70 v collector-emitter breakdown voltage v (br)ceo i c =-200ma, i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-10ma, i c =0 -5 v collector cut-off current i cbo v cb =-70v, i e =0 -1 ma emitter cut-off current i ebo v eb =-5v, i c =0 -5 ma h fe(1) * v ce =-4v, i c =-4a 20 100 dc current gain h fe(2) * v ce =-4v, i c =-10a 5 v ce(sat) * i c =-4a, i b =-0.4a -1.1 v collector-emitter saturation voltage v ce(sat) * i c =-10a, i b =-3.3a -8 v base-emitter voltage v be * v ce =-4v, i c =-4a -1.8 v transition frequency f t v ce =-10v, i c =-0.5a 2 mhz note:*pulse test: t p 300 s, ? 0.02. to-220 -3l 1. base 2. collectotr 3. emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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